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2017

Terahertz Light-Matter Interaction beyond Unity Coupling Strength

A. Bayer, M. Pozimski, S. Schambeck, D. Schuh, R. Huber, D. Bougeard, and C. Lange

Nano Lett.17, 6340 (2017)

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

M. Radek, B. Liedke, B. Schmidt, M. Voelskow, L. Bischoff , J. L. Hansen, A. N. Larsen, D. Bougeard, R. Böttger, S. Prucnal, M. Posselt, and H. Bracht

Materials 10, 813 (2017)

Magnetoresistance oscillations induced by high-intensity terahertz radiation

T. Herrmann, Z. D. Kvon, I. A. Dmitriev, D. A. Kozlov, B. Jentzsch, M. Schneider, L. Schell, V. V. Belk'ov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, T. Oltscher, D. Weiss, and S. D. Ganichev

Phys. Rev. B 96, 115449 (2017)

Hanle spin precession in a two-dimensional electron system

T. Kuczmik, M. Oltscher, A. Bayer, D. Schuh, D. Bougeard, M. Ciorga, and D. Weiss

Phys. Rev. B 95, 195315 (2017)

Determination of hole g-factor in InAs/InGaAs/InAlAl quantum wells by magneto-photoluminescence studies

Ya. V. Terent'ev, S. N. Danilov, M. V. Durnev, J. Loher, D. Schuh, D. Bougeard, S. V. Ivanov, and S. D. Ganichev

Journal of Appl. Phys. 121, 053904 (2017)

Optical investigation of electrical spin injection into an inverted two-dimensional electron gas structure

M. Buchner, T. Kuczmik, M. Oltscher, M. Ciorga, T. Korn, J. Loher, D. Schuh, C. Schüller, D. Bougeard, D. Weiss, and C. H. Back

Phys. Rev. B 95, 035304 (2017)

2016

Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature

L. Chen, M. Decker, M. Kronseder, R. Islinger, M. Gmitra, D. Schuh, D. Bougeard, J. Fabian, D. Weiss, and C. H. Back

Nature Commun. 7, 13802 (2016)

Enhanced spin-orbit coupling in core/shell nanowires

S. Furthmeier, F. Dirnberger, M. Gmitra, A. Bayer, M. Forsch, J. Hubmann, C. Schüller, E. Reiger, J. Fabian, T. Korn, and D. Bougeard

Nature Commun. 7, 12413 (2016)

Anisotropic Polar Magneto-Optic Kerr Effect of Ultrathin Fe/GaAs (001) Layers du to Interfacial Spin-Orbit Interaction

M. Buchner, P. Högl, S. Putz, M. Gmitra, S. Günther, M. A. W. Schoen, M. Kronseder, D. Schuh, D. Bougeard, J. Fabian, and C. H. Back

Phys. Rev. Lett 117, 157202 (2016)

Deterministic transfer of spin polarization in wire-like lateral structures via the persistent spin helix

M. Schwemmer, A. Hanninger, M. Weingartner, M. Oltscher, M. Ciorga, D. Schuh, D. Bougeard, T. Korn, and C. Schüller

Appl. Phys. Lett. 109, 172106 (2016)

Analog of microwave-induced resistance oscillations induced in GaAs heterostructures by terahertz radiation

T. Herrmann, I. A. Dmitriev, D. A. Kozlov, M. Schneider, B. Jentzsch, Z. D. Kvon, P. Olbrich, V. V. Belkov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, M. Oltscher, D. Weiss, and S. D. Ganichev

Phys. Rev. B 94, 081301 (R) (2016)

Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs

T. Botzem, R. P. G. McNeil, J.-M. Mol, D. Schuh, D. Bougeard, and H. Bluhm

Nature Commun. 7, 11170 (2016)

Towards quantification of the crucial impact of Auger recombination for the efficiency droop in (AlInGa)N quantum well structures

A. Nirschl, M. Binder, M. Schmid, I. Pietzonka, H.-J. Lugauer, R. Zeisel, M. Sabathil, D. Bougeard, and B. Galler

Optics Express 24, 2971 - 2980 (2016)

Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

J. Hubmann, B. Bauer, H. S. Körner, S. Furthmeier, M. Buchner, G. Bayreuther, F. Dirnberger, D. Schuh, C. H. Back, J. Zweck, E. Reiger, and Dominique Bougeard

Nano Lett. 16, 900 - 905 (2016)

Coherent cyclotron motion beyond Kohn's theorem

T. Maag, A. Bayer, S. Baierl, M. Hohenleutner, T. Korn, C. Schüller, D. Schuh, D. Bougeard, C. Lange, R. Huber, M. Mootz, J. E. Sipe, S. W. Koch, and M. Kira

Nature Physics 12, 119 - 123 (2016)

2015   

Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures

Ya. V. Terent'ev, S. N. Danilov, H. Plank, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, I. V. Rozhansky, S. V. Ivanov, D. R. Yakovlev, and S. D. Ganichev

Journ. Appl. Phys. 118, 113906 (2015)

Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures

A. Nirschl, M. Binder, M. Schmid, M. M. Karow, I. Pietzonka, H.-J. Lugauer, R. Zeisel, M. Sabathil, D. Bougeard, and B. Galler

Journ. Appl. Phys. 118, 033103 (2015)

In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, D. Weiss, and J. Nitta

Appl. Phys. Lett. 106, 262402 (2015)

Emergence of spin-orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide

T. Hupfauer, A. Matos-Abiague, M. Gmitra, F. Schiller, J. Loher, D. Bougeard, C. H. Back, J. Fabian, and D. Weiss

Nature Commun., 6, 7374 (2015)

Double-island Coulomb blockade in (Ga,Mn)As nanoconstrictions

S. Geißler, S. Pfaller, M. Utz, D. Bougeard, A. Donarini, M. Grifoni, and D. Weiss

Phys. Rev. B 91, 195432 (2015)

Commensurability oscillations in a lateral superlattice with broken inversion symmetry

M. Staab, M. Matuschek , P. Pereyra, D. Schuh, D. Bougeard, R. R. Gerhardts, and D. Weiss

New J. Phys. 17, 043035 (2015)

Shot Noise Induced by Nonequilibrium Spin Accumulation

T. Arakawa, J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, J. Nitta, D. Bougeard, D. Weiss, T. Ono, and K. Kobayashi

Phys. Rev. Lett. 114, 016601 (2015)

Surface properties of monolithic zirconia after dental adjustment treatments and in vitro wear simulation

V. Preis, M. Schmalzbauer, D. Bougeard, S. Schneider-Feyrer, M. Rosentritt

Journ. of Dentistry 43, 133 - 139 (2015)

2014

Long exciton lifetimes in stacking-fault-free wurtztite GaAs nanowires

S. Furthmeier, F. Dirnberger, J. Hubmann, B. Bauer, T. Korn, C. Schüller, J. Zweck, E. Reiger, and D. Bougeard

Appl. Phys. Lett. 105, 222109 (2014)

Extremely Nonperturbative Nonlinearities in GaAs Driven by Atomically Strong Terahertz Fields in Gold Metamaterials

C. Lange, T. Maag, M. Hohenleutner, S. Baierl, O. Schubert, E. R. J. Edwards, D. Bougeard, G. Woltersdorf, and R. Huber

Phys. Rev. Lett. 113, 227401 (2014)

Electrical Spin Injection into High Mobility 2D Systems

M. Oltscher, M. Ciorga, M. Utz, D. Schuh, D. Bougeard, and D. Weiss

Phys. Rev. Lett. 113, 236602 (2014)

Hole-spin dynamics and hole g-factor anisotropy in coupled quantum well systems

C. Gradl, M. Kempf, D. Schuh, D. Bougeard, R. Winkler, C. Schüller, and T. Korn

Phys. Rev. B 90, 165439 (2014)

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well

R. Moriya, K. Sawano, Y. Hoshi, S. Masubuchi, Y. Shiraki, A. Wild, C. Neumann, G. Abstreiter, D. Bougeard, T. Koga, and T. Machida

Phys. Rev. Lett. 113, 086601 (2014)

Direct detection of spontaneous polarization in wurtzite GaAs nanowires

B. Bauer, J. Hubmann, M. Lohr, E. Reiger, D. Bougeard, and J. Zweck

Appl. Phys. Lett. 104, 211902 (2014)

Experimental investigation of the optical spin-selection rules in bulk Si and Ge/Si quantum dots

N. Sircar and D. Bougeard

Phys. Rev. B 89, 041301(R) (2014)

Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Ya. V. Terent'ev, S. N. Danilov, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, M. S. Mukhin, S. V. Ivanov, and S. Ganichev

Appl. Phys. Lett. 104, 101111 (2014)

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, J. Nitta, and D. Weiss

Phys. Rev. B 89, 081307(R) 2014

Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

M. Radek, H. Bracht, M. Posselt, B. Liedke, B. Schmidt, and D. Bougeard

J. Appl. Phys. 115, 023506 (2014)

Quantitative modeling of the temperature-dependent internal quantum efficiency in InGaN light emitting diodes

A. Nirschl, A. Gomez-Iglesias, M. Sabathil, G. Hartung, J. Off, and D. Bougeard

Phys. Status Solidi A 211, 2509 - 2513 (2014) 

All-electrical detection of spin Hall effect in semiconductors

M. Ehlert, C. Song, M. Ciorga, T. Hupfauer, J. Shiogai, M. Utz, D. Schuh, D. Bougeard, and D. Weiss

Phys. Status Solidi B 251 (9), 1725-1735 (2014)

2013

Effect of contact geometry on spin-transport signals in nonlocal (Ga,Mn)As/GaAs devices

M. Ciorga, M. Utz, D. Schuh, D. Bougeard, and D. Weiss

Phys. Rev. B 88, 155308 (2013)

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

M. Binder, A. Nirschl, R. Zeisel, T. Hager, H.-J. Lugauer, M. Sabathil, D. Bougeard, J. Wagner, and B. Galler

Appl. Phys. Lett. 103, 071108 (2013)

Laterally self-ordered silicon-germanium islands with optimized confinement properties

T. Zabel, N. Sircar, N. Hauke, J. Zweck, M. Döblinger, M. Kaniber, J. J. Finley, G. Abstreiter, Y. Arakawa, and D. Bougeard

Appl. Phys. Lett. 103, 063105 (2013)

Demonstration of the spin solar cell and spin photodiode effect

B. Endres, M. Ciorga, M. Schmid, M. Utz, D. Bougeard, D. Weiss, G. Bayreuther, and C. Back

Nature Communications,4, 2068 (2013)

Radiation-enhanced self- and boron diffusion in germanium

S. Schneider, H. Bracht, J. N. Klug, J. Lundsgaard Hansen, A. Nylandsted Larsen, D. Bougeard, and E. E. Haller

Phys. Rev. B 87, 115202 (2013)

2012

Few electron double quantum dot in an isotopically purified 28Si quantum well

A. Wild, J. Kierig, J. Sailer, J. W. Ager, E. E. Haller, G. Abstreiter, S. Ludwig, and D. Bougeard

Appl. Phys. Lett. 100, 143110 (2012)

Growth of ultrathin epitaxial Fe/MgO spin injector on (001) (Ga, Mn)As

P. Torelli, M. Sperl, R. Ciancio, J. Fujii, C. Rinaldi, m. Cantoni, R. Bertacco, M. Utz, D. Bougeard, M. Soda, E. Carlino, G. Rossi, C. H. Back, and G. Panaccione

Nanotechnology 23, 465202 (2012)

All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

M. Ehlert, C. Song, M. Ciorga, M. Utz, D. Schuh, D. Bougeard, and D. Weiss

Phys. Rev. B 86, 205204 (2012)

A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands

N. Hauke, A. Tandaechanurat, T. Zabel, T. Reichert, H. Takagi, M. Kaniber, S. Iwamoto, D. Bougeard, J. J. Finley, G. Abstreiter, and Y. Arakawa

New J. Phys. 14, 083035 (2012)

Transition from Au to pseudo-Ga catalyzed growth mode observed in GaAs nanowires grown by molecular beam epitaxy

M. Soda, A. Rudolph, D. Schuh, J. Zweck, D. Bougeard, and E. Reiger

Phys. Rev. B 85, 245450 (2012)

Reorientation transition of the magnetic proximity polarization in Fe/(Ga, Mn)As bilayers

M. Sperl, P. Torelli, F. Eigenmann, M. Soda, S. Poleysa, M. Utz, D. Bougeard, H. Ebert, G. Panaccione, and C. H. Back

Phys. Rev. B 85, 184428 (2012)

Nonuniform current and spin accumulation in a 1 µm thick n-GaAs channel

B. Endres, M. Ciorga, R. Wagner, S. Ringer, M. Utz, D. Bougeard, D. Weiss, C. H. Back, and G. Bayreuther

Appl. Phys. Lett. 100, 092405 (2012)

2011

Ion-beam mixing in crystalline and amorphous germanium isotope multilayers

H. Bracht, M. Rade, R. Kube, S. Knebel, M. Posselt, B. Schmidt, E. E. Haller, and D. Bougeard

J. Appl. Phys. 110, 093502 (2011)

Proximity Induced Enhancement of the Curie Temperature in Hybrid Spin Injections Device

C. Song, M. Sperl, M. Utz, M. Ciorga, G. Woltersdorf, D. Schuh, D. Bougeard, C. H. Back, and D. Weiss

Phys. Rev. Lett. 107, 056601 (2011)

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanoactivities

N. Hauke, S. Lichtmannecker, T. Zabel, F. P. Laussy, A. Laucht, M. Kaniber, D. Bougeard, G. Abstreiter, J. J. Finley, and Y. Arakawa

Phys. Rev. B 84, 085320 (2011)     

Interplay between the electrical transport properties of GeMn thin films and Ge substrates

N. Sircar, S. Ahlers, C. Majer, G. Abstreiter, and D. Bougeard

Phys. Rev. B 83, 125306 (2011)

2010

Quantum Hall resistance overshoot in two-dimensional (2D) electron gases: theory and experiment

J. Sailer, A. Wild, V. Lang, A. Siddiki, and D. Bougeard

New J. Phys. 12, 113033 (2010)

Electrostatically defined quantum dots in a Si/SiGe heterostructure

A. Wild, J. Sailer, J. Nützel, G. Abstreiter, S. Ludwig, and D. Bougeard

New J. Phys. 12, 113019 (2010)

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

N. Hauke, T. Zabel, K. Mueller, M. Kaniber, A. Laucht, D. Bougeard, G. Abstreiter,

J. J. Finley, and Y. Arakawa

New J. Phys. 12, 053005 (2010)

2009

Ge1-xMnx Clusters: Central Structural and Magnetic Building Blocks of Nanoscale Wire-Like Self-Assembly in a Magnetic Semiconductor

D. Bougeard, N. Sircar, S. Ahlers, V. Lang, G. Abstreiter, A. Trampert, J. M. LeBeau, S. Stemmer, D. W. Saxey, and A. Cerezo

Nano Lett. 9, 3743 (2009)

Interstitial-Mediated Diffusion in Germanium under Proton Irradiation

H. Bracht, S. Schneider, J. N. Klug, C. Y. Liao, J.L. Hansen, E. E. Haller, A. N. Larsen, D. Bougeard, M. Posselt, and C. Wundisch

Phys. Rev. Lett. 103, 255501 (2009)

Comparison of the magnetic properties of GeMn thin films through Mn L-edge x-ray absorption

S. Ahlers, P. R. Stone, N. Sircar, E. Arenholz, O. D. Dubon, and D. Bougeard

Appl. Phys. Lett. 95, 151911 (2009)

Self-assembled Mn5Ge3 nanomagnets close to the surface and deep inside a Ge1-xMnx epilayer

R. T. Lechner, V. Holy, S. Ahlers, D. Bougeard, J. Stangl, A. Trampert, A. Navarro-Quezada, and G. Bauer

Appl. Phys. Lett. 95, 023102 (2009)

A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiys, K. M. Itoh, J. W. Ager, E.E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, and D. Bougeard

Phys. Stat. Sol. RRL 3 , 61 (2009)

2008

Diffusive x-ray scattering from inclusions in ferromagnetic Ge1-xMnx layers

V. Holy, R. T. Lechner, S. Ahlers, L. Horyk, T. H. Metzger, A. Navarro-Quezada, A. Trampert, D. Bougeard, and G. Bauer

Phys. Rev. B 78, 144401 (2008)

Self-diffusion in germanium isotope multilayers at low temperatures

E. Hüger, U. Tietze, D. Lott, H. Bracht, D. Bougeard, E. E. Haller, and H. Schmidt

Appl. Phys. Lett. 93, 162104 (2008)

All-electric detection of the polarization state of terahertz radiation

S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov, P. Olbrich, D. Schuh, W. Wegscheider, D. Bougeard, G. Abstreiter, and W. Prettl

J. Appl. Phys. 103, 114504 (2008)

2007

Subnanosecond ellipticity detector for laser radiation

S. D. Ganichev, J. Kiermaier, W. Weber, S.N. Danilov, P. Olbrich, D. Schuh, C. Gerl,

W. Wegscheider, W. Prettl, D. Bougeard, and G. Abstreiter

Appl. Phys. Lett. 91, 091101 (2007)

2006

Clustering in a Precipitate-Free GeMn Magnetic Semiconductor

D. Bougeard, S. Ahlers, A. Trampert, N. Sircar, and G. Abstreiter

Phys. Rev. Lett. 97, 237202 (2006)

Magnetic and structural properties of GexMn1-x films: Precipitation of intermetallic nanomagnets

S. Ahlers, D. Bougeard, N. Sircar, G. Abstreiter, A. Trampert, M. Opel, and R. Gross

Phys. Rev. B 74, 214411 (2006)

Ferromagnetic GeMn nanostructures

S. Ahlers, D. Bougeard, H. Riedl, G. Abstreiter, A. Trampert, W. Kipferl, K. Sperl, A. Bergmaier, and G. Dollinger

Physica E 32, 422 (2006)

2005

Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

P. H. Tan, D. Bougeard, G. Abstreiter, and K. Brunner

J. Appl. Phys. 98, 113517 (2005)

2004

Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

D. Bougeard, P. H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, and K. Brunner

Physica E 21, 312 (2004)

Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices

P. H. Tan, D. Bougeard, G. Abstreiter, and K. Brunner

Appl. Phys. Lett. 84, 2632 (2004)

2003

Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots

P. H. Tan, K. Brunner, D. Bougeard, and G. Abstreiter

Physical Review B 68, 125302 (2003)

Intraband photoresponse of SiGe quantum dot/ quantum well structures

D. Bougeard, K. Brunner, and G. Abstreiter

Physica E 16, 609 (2003)

2002

Novel Si/Ge quantum dot midinfrared photodetector structures with in-plane transport

D. Bougeard, K. Brunner, and G. Abstreiter

Inst. Phys. Conf. Ser. 170, 589 (2002)

Ge quantum dots in Si: self-assembly, stacking and level spectroscopy

K. Brunner, M. Herbst, D. Bougeard, C. Miesner, T. Asperger, C. Schramm, and G. Abstreiter

Physica E 13, 1018 (2002)

A quantum dot infrared photodetector with lateral carrier transport

L. Chu, A. Zrenner, D. Bougeard, M. Bichler, and G. Abstreiter

Physica E 13, 301 (2002)

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