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Focuses in the materials development by molecular beam epitaxy are:

  • self-assembled nanostructures
  • two-dimensional carrier systems in silicon-germanium and arsenide-based heterostructures
  • nuclear spin engineering (molecular beam epitaxy of single Si and Ge isotopes)
  • development of magnetic semiconductors, in particular (Ga,Mn)As and Ge alloyed with Mn


Model systems currently under investigation are

  1. qubits
    • electrostatically defined quantum dots in a nuclear spin engineered silicon-germanium environment
    • electrical g-factor switching of carriers in a silicon-germanium environment
  2. manipulation of ensembles of spins in semiconductors
    • spin injection devices based on (Ga,Mn)As
    • physics of self-assembled nanomagnets embedded in a semiconductor matrix
    • physics of III-V magnetic nanowires
    • optical spin injection and detection in silicon nanostructures
  3. silicon-based photonics using self-assembled germanium islands as active emitters.


We acknowledge funding from the Deutsche Forschunggemeinschaft via

  1. Faculty of Physics