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Materials development

We develop band-engineered semiconductor systems by molecular beam epitaxy (MBE) in silicon-germanium, arsenides and antimonides. Currently, we are particularly interested in

  • gate-tunable 2D electron or hole systems
  • core/shell semiconductor nanowires and quantum wires
  • isotopically purified heterostructures (silicon and germanium isotopes)
  • hybrid oxide/semiconductor or metal/semiconductor MBE structures 

Model systems

We use our heterostructures to then play with the physics of

  • spin qubits in silicon (electron spin) and germanium (hole spin)
    1. all-eletrical control  of spin qubits
    2. electrical g-factor switching in a silicon-germanium environment
  • spin-orbit effects and their electric control in semiconductors (arsenides, antimonides)
  • nanophotonics and lasing in quantum wires (GaAs/AlGaAs)
  • proximity effects at interfaces between semiconductors and superconductors

See also our publications and alumni for recent examples of our work.

  1. Faculty of Physics