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Publikationen Physik, Kristallographie, Mineralogie, Materialwissenschaft

1959     Ein Demonstrationsexperiment zur Bestimmung der Lichtgeschwindigkeit. HvP., H. H. Staub. Helvetica Physica Acta 32, 326-327.

1964     A Phase Transition and its Influence on Superconductivity in the (Nb,V)-Au A-15-Type Structure. E. Bucher, F. Laves, J. Müller, HvP. Physics Letters 8, 27-28.

1964     The Influence of Impurities on the Formation of the Cu3Au-Type Structure from the Cr3Si-type Structure. HvP, F. Laves. Acta Crystallographica 17, 213-214.

1964     Mischsysteme von Verbindungen des Cr3Si-Typs und deren Polymorphie-Erscheinungen. HvP. 54 p. Dissertation Universität Zürich.

1967     Growth of Single Crystals of Cadmium Chromium Selenide by Liquid Transport with Platinum Catalyst. HvP. J. Applied Physics 38, 955-956.

1967     Ferromagnetic Resonance and other Properties in Cadmium Chromium Selenide. R. C. LeCraw, HvP, M. D. Sturge. J. Applied Physics 38, 965-966.

1967     Growth and Properties of Single Crystals of the Ferromagnetic Semiconductor CdCr2Se4. HvP. Helvetica Physica Acta 40, 810-811.

1968     Bandedge Shift of CdCr2Se4 Near Curie Temperature. C. R. Wen, B. Hershenov, HvP, H. Pinch. Applied Physics Letters 13, 188-190.

1968     Device Application Feasibility of Single Crystal CdCr2Se4, a Ferromagnetic Semiconducting Spinel. C. R. Wen, B. Hershenov, HvP, H. Pinch. IEEE Transactions on Magnetics 4, 703-704.

1969     Crystal Growth by Topochemical Reactions. CdCr2Se4 in the System CdSe-CrCl3-Pt. HvP. J. Crystal Growth 5, 135-138.

1969     Internal Quantum Efficiency of GaAs1-xPx Electroluminescent Diodes. J. J. Tietjen, C. J. Nuese, HvP. Scientific Report AFCRL-69-0035, 22 p. Clearinghouse for Federal Scientific and Technical Information Washington D. C.

1970     Röntgenographische Untersuchung auf Spaltstruktur im Cr3Si-Typ. HvP. Z. Kristallographie 131, 73-87.

1970     Electrical and Optical Properties of Vapour Grown GaAs:Si. H. Kressel, HvP. J. Applied Physics 41, 2244-2246.

1970     Growth Steps in Epitaxial GaAs1-xPx. HvP. J. Crystal Growth 7, 246-250.

1971     Crystal Growth and Characterization of Chromium Sulfo- and Selenospinels. HvP J. Crystal Growth 9, 296-304.

1971     Chalcogenide Spinels and Alternative Structures. HvP. Z. Kristallographie 133, 464-472.

1971     Croissance d'eulytine Bi4Si3O12 et des composés substitués par la méthode Czochralski. HvP. J. Crystal Growth 11, 348-350.

1972     Kristalle und epitaktische Schichten aus der Gasphase. HvP, P. R. Sahm. Neue Zürcher Zeitung Technik 22. Febr. 1971, 15-18.

1974     Zur Kristallchemie von Sulfid-und Selenidspinellen. HvP. Fortschritte der Mineralogie 51, 201-239.

1974     Elektronenspinresonanz von Gd3+ in Wismutsilikat Bi4(SiO4)3. H. Hagen, F. Waldner, G. Lang, HvP. Helvetica Physica Acta 47, 431.

1974     Kristallographie - Aufgaben, Methoden und Ergebnisse. HvP. Regensburger Universitätszeitung Sept. 1974, 25-32.

1974     Mineralogy in Industry HvP. Exkursionsführer zur IMA-DMG Tagung Regensburg 1974. Fortschritte der Mineralogie 52 Beiheft 1, 139-149.

1977     Whiskers, Hoppers und Dendriten. Kristallskelette - physikalisch-chemische Ursachen anomaler Wachstumsformen. HvP. Lapis 2, Heft 12, 9-13.

1978     Critical Speeding-Up of Spin-Relaxation in CdCr2Se4. J. Kötzler, HvP. Physical Review Letters 40, 790-793,

1978     Widmannstättensche Figuren - Orientierte Ausscheidungen in Eisenmeteoriten. HvP. Lapis 3 Heft 12, 12-15.

1979     X-ray Diffraction and Spectroscopic Investigations of Phase Transitions in Linear Chain Compounds. W. Daniels, H. Yersin, HvP, G. Gliemann. Solid State Communications 30, 353-355.

1980     Untersuchungen mit Röntgen-Dünnschichtdiffraktometer: Struktur dünner Schichten von Oxid-Halbleitern. HvP, K. K. Weiner. Z. Kristallographie 154, 81-82.

1983     Zeit/Temperatur-aufgelöste Pulverdiffraktometermessungen mit ortsauflösendem Detektor. W. Rußwurm, HvP, H. E. Göbel. Z. Kristallographie 162, 193-194.

1986     Structural Data of beta-Zn7Sb2O12. W. Rußwurm, R. Bruchhaus, HvP. Naturwissenschaften 73, 662-563.

1987     Kristallchemische Untersuchungen an thalliumdotierten CsI-Einkristallen. J. Lindner, B. C. Grabmaier, HvP, Z. Kristallographie 180, 20-21.

1989     Contrast phenomena of band-band and deep-level photoluminescence topographs in annealed semi-insulating GaAs. H. Ch. Alt, M. Neef, HvP. Applied Physics Letters 55, 1972-1974.

1990     10 GBit/s on-chip photodetection with self-aligned silicon bipolar transsitors. J. Popp, HvP. Proceedings ESSERC 571-574.

1990     Silicon Bipolar Technology - A Versatile Base for High-Speed Communication Circuits- L. Treitinger, E. Bertagnolli, K. Ehinger, J. Popp, M. Raisch, H. Kabza, R. Schreiter, I. Kerner, R. Köpl, H. Weidlich, J. Weng, HvP, H. M. Rein. Internat. Zürich Seminar on Digital Communications Proceedings IEEE, 27-38.

1991     Borosilcate Glass and its Application in Bipolar Technology. M. Bianco, K. Ehinger, B. Kautke, H. Klose, HvP. Microelectronics Engineering 15, 525-528.

1991     Temperature Expansion in (La,Sr)(Mn,Co)O3 Cathode Materials for Solid Oxide Fuel Cells. A. Iberl, HvP, M. Schießl, E. Ivers-Tiffee, W. Wersing, G. Zorn. Proceedings First European Powder Diffraction Conf. Zürich. Trans Tech. Publ. 869-874.

1991     High Temperature X-ray Diffraction Measurements of Phase Transitions and Thermal Expansion  in (La,Sr)(Mn,Co)O3 Cathode Materials. A. Iberl, HvP, M. Schießl, E. Ivers-Tiffee, W. Wersing, G. Zorn. Proceedings Second Int. Symposium on Solid Oxide Fuel Cells Athens, 527-535.

1992     Ultrashallow Emitter-Base Profiles by Double Diffusion. M. Biebl, M. Bianco, K. Ehinger, HvP, H. Klose. 22nd European Solid State Device Research Conference, Leuven, 347-350.

1994     Perimeter Effects and Doping Conditions in Narrow-Emitter Silicon Bipolar Transistors. J. Böck, J. Popp, R. Schreiter, HvP. Proceedings of the 24th European Solid State Device Research Conf. Edinburgh, 47-50.

1994     Controlled Sub-nm Oxide Growth and its Application to High Speed Bipolar Poly-Emitter Transistors. A. M. Berthold, J. G. M. Mulder, A. vom Felde, L. F. T. Kwakman, J. Weitzel, HvP, H. Klose. Proceedings of the 24th European Solid State Device Research Conf. Edinburgh, 51-54.

1994     Micromechanics Compatible to a 0.8 µm CMOS Process. M. Biebl, T. Scheiter, C. Hierold, HvP, H. Klose. Eurosensors 1994 - 8th European Conf. on Solid State Transducers. Toulouse 181.

1994     The Role of Point Defect Sources in the Formation of Boron Polyemitters. A. Berthold, A. vom Felde, M. Biebl, HvP, Proceedings Int. Electron Device Meeting San Francisco. Technical Digest 509-512.

1994     The Effect of Substrate Impurities on the Electronic Conductivity in CIS Thin Films. J. Holz, F. Karg, HvP. Proceedings 12th European Photovoltaic Solar Energy Conf. Amsterdam 1592-1595.

1995     Micromechanics Compatible with a 0.8µm CMOS Process. M. Biebl, T. Scheiter, C. Hierold, HvP, H. Klose. Sensors and Actuators A 46/47, 593-597.

1995     Fracture strength of doped and undoped polysilicon. M. Biebl, HvP. Proceedings Stockholm Conf. on Solid State Sensors and Actuators 72-75.

1995     In-situ doped emitter-polysilicon for 0.5 µm silicon bipolar technology. J. Böck, M. Franosch, H. Schäfer, HvP, J. Popp. Proc. 25th European Solid State Device Research Conf. Den Haag 421-424.

1997     Oxidation enhanced diffusion of boron on silicon-on-insulator substrates. S. Pindl, M. Biebl, E. Hammerl, H. Schäfer, HvP. Proceedings of the Sixth Int. Symp. On Ultralarge Scale Integration Science and Technology, Montreal. Electrochem. Soc. 623-631.

1997     Oxidation enhanced diffusion of boron on silicon-on-insulator substrates. S. Pindl, M. Biebl, E. Hammerl, H. Schäfer, HvP. J. Electrochemical Society 144, 4022-4026.

1997     Optimization of Ultra High Density MOS Arrays in 3D. H. Haneder, E. Bertagnolli, HvP, W. Krautschneider, F. Hofmann, J. Willer, T. Boehm. Proc.27th Solid State Device Research Conf. Stuttgart, 268-271.

1997     As and B Diffusion in TiSi2/Polysilicon Gates with Dual Workfunction Gate Technology. A. Berthold, E. Hammerl, HvP. Proc.27th European Solid State Device Research Conf. Stuttgart, 744-747.

1998     DC and AC Performance of Si and Si/Si1-xGex Bipolar Transistors at Temperatures up to 300°C.M. Pohl, K. Aufinger, J. Böck, T. F. Meister, HvP. Proc. of the European Solid State Device Research Conference ESSDERC Bordeaux. 100-103.

1998    A Partially Depleted SOI CMOS-Technolgy with Advanced Processing for 130 nm Channel Length. S. Pindl, J. Berthold, T. Huttner, S. Reif, D. Schumann, HvP. ESSDERC Bordeaux 268-271.

1999     A 130 nm-Channel Length Partially Depleted SOI CMOS-Technology. S. Pindl, J. Berthold, T. Huttner, S. Reif, D. Schumann, HvP. IEEE Trans. on Electron Devices 46, 1562-1566.

2000     Effect of film composition on low temperature processing of SBT deposited by MOCVD. H. Bachhofer, F. Hintermaier, M. Hauf, O. Spindler, T. Haneder, C. Dehm, HvP. Mater. Res. Symp. Proceed. 596, 149-154.

2000     Gate stacks for low voltage ferroelectric field effect devices based on Pt/SBT/CeO2/Si(100). H. Haneder, W. Hönlein, H. Bachhofer, M. Ullmann, HvP, R. Waser. Mater. Res. Symp. Proceed. 596, 437-442.

2000     On the erase mechanism in SONOS nonvolatile memories. H. Bachhofer, H. Reisinger, HvP, E. Bertagnolli. 17th IEEE Nonvolatile Semiconductor Memory Workshop. 124-126.

2000     Scalable High Voltage Trenchgate Transistor for Flash. E. Landgraf, F. Hofmann, HvP. Proceed. 30th European Solid State Device Research Conf., 380-383.

2001     Relaxation effects and steady-state conduction in non-stoichiometric SBT films. H. Bachhofer, R. Reisinger, H. Schroeder, T. Haneder, C, Dehm, HvP. Ferroelectrics 33, 245-252.

2001     Transient conduction in multidielectric silicon-oxide-nitride-oxide semiconductor Structures. H. Bachhofer, R. Reisinger, E. Bertagnolli, HvP. J. Applied Physics 89, 2791-2800.

2001     Phase formation and crystal growth of S-Bi-Ta-O thin films grown by metalorganic vapour deposition. H. Bachhofer, HvP, W. Hartner, C. Dehm, B, Jobst, A. Kiendl, H. Schroeder, R. Waser. J. Materials Research 16, 2966-

2001     Effect of oxygen ion implantation on the crystallization of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapour deposition. H. Bachhofer, R. Liedtke, N. Nagel, HvP, R. Waser. J. American Ceramic Soc….

2001     Optimization of Pt/SBT/CeO2/Si (100) gate stacks for low voltage ferroelectric field effect devices. T. Haneder, W. Hönlein, H. Bachhofer, HvP, R. Waser. Integrated Ferroelectrics 34, 47-54.

2001     Zinn - einige Eigenschaften und Verwendungen. HvP. In: Der Seidige Glanz, Zinn in Ostbayern und Böhmen. Schriftenreihe des Bergbau- und Industriemuseums Ostbayern, Band 42, 15-25.

2002     Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films. H. Bachhofer, R. Reisinger, G. Steinlesberger, N. Nagel, H. Cerva, HvP, H. Schroeder, R. Waser. Integrated Ferroelectics 39, 289-

2002     Substrate Current and Degradation of Trench LDD transistors. E. Landgraf, F. Hofmann, T. Schulz, HvP. Solid State Electronics 46, 965-970. 

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