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• "Quantum theory of bilayer quantum Hall smectics", Papa, Schliemann, MacDonald, Fisher, 2003

  Publication

  Mean-field theory predicts that bilayer quantum Hall systems at odd integer total filling factors can have stripe ground states, in which the top...

  Publication on epub.uni-regensburg.de: "Quantum theory of bilayer quantum Hall smectics" (external link, opens in a new window)

• "Disorder-induced noncollinear ferromagnetism in models for (III,Mn)V semiconductors", Schliemann, 2003

  Publication

  We study the ground-state properties of kinetic-exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions. Our method is embedded...

  Publication on epub.uni-regensburg.de: "Disorder-induced noncollinear ferromagnetism in models for (III,Mn)V semiconductors" (external link, opens in a new window)

• "Correlation energy, quantum phase transition, and bias potential effects in quantum Hall bilayers at ν=1", Schliemann, 2003

  Publication

  We study the correlation energy, the effective anisotropy parameter, and quantum fluctuations of the pseudospin magnetization in bilayer quantum Hall...

  Publication on epub.uni-regensburg.de: "Correlation energy, quantum phase transition, and bias potential effects in quantum Hall bilayers at ν=1" (external link, opens in a new window)

• "Quantum computing in optical microtraps based on the motional states of neutral atoms", Eckert, Mompart, Yi, Schliemann, Bruss, Birkl, Lewenstein, 2002

  Publication

  We investigate quantum computation with neutral atoms in optical microtraps where the qubit is implemented in the motional states of the atoms, i.e.,...

  Publication on epub.uni-regensburg.de: "Quantum computing in optical microtraps based on the motional states of neutral atoms" (external link, opens in a new window)

• "Variational study of the ν=1 quantum Hall ferromagnet in the presence of spin-orbit interaction", Schliemann, Egues, Loss, 2003

  Publication

  We investigate the ν=1 quantum Hall ferromagnet in the presence of spin-orbit coupling of the Rashba or Dresselhaus type by means of...

  Publication on epub.uni-regensburg.de: "Variational study of the ν=1 quantum Hall ferromagnet in the presence of spin-orbit interaction" (external link, opens in a new window)

• "Nonballistic Spin-Field-Effect Transistor", Schliemann, Egues, Loss, 2003

  Publication

  We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals,...

  Publication on epub.uni-regensburg.de: "Nonballistic Spin-Field-Effect Transistor" (external link, opens in a new window)

• "Entanglement in SU(2)-invariant quantum spin systems", Schliemann, 2003

  Publication

  We analyze the entanglement of SU(2)-invariant density matrices of two spins S1, S2 using the Peres-Horodecki criterion. Such density matrices arise...

  Publication on epub.uni-regensburg.de: "Entanglement in SU(2)-invariant quantum spin systems" (external link, opens in a new window)

• "Spin decay and quantum parallelism", Schliemann, Khaetskii, Loss, 2002

  Publication

  We study the time evolution of a single spin coupled inhomogeneously to a spin environment. Such a system is realized by a single electron spin bound...

  Publication on epub.uni-regensburg.de: "Spin decay and quantum parallelism" (external link, opens in a new window)

• "Quantum-Hall quantum bits", Yang, Schliemann, MacDonald, 2002

  Publication

  Bilayer quantum-Hall systems can form collective states in which electrons exhibit spontaneous interlayer phase coherence. We discuss the possibility...

  Publication on epub.uni-regensburg.de: "Quantum-Hall quantum bits" (external link, opens in a new window)

• "Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors", Schliemann, 2006

  Publication

  We study the homogeneous interacting hole gas in p-doped bulk III-V semiconductors. The structure of the valence band is modeled by Luttinger's...

  Publication on epub.uni-regensburg.de: "Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors" (external link, opens in a new window)