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We build solid state systems which allow us to experience quantum mechanics and quantization effects in the lab. Our goal is to experimentally uncover the underlying fundamental physics and to develop controllable real-world quantum systems in semiconductors. Possible practical applications encompass scalable quantum bits (qubits) for the implementation of universal quantum computing, sensing schemes based on quantum effects and boosting photonic properties by creating engineered coupling between light and matter.

Experimentally, we study signatures of quantum effects in electronic transport and in luminescence spectroscopy. Many of our quantum systems are realized in specifically designed semiconductor-based nanostructures which we create in molecular beam epitaxy (MBE) crystal growth. Our group has a longstanding expertise in correlating the quantum properties of a system with the crystal properties of nanostructures.

Our current activities cover three research fields:

Spin qubits in gate-defined electronic quantum circuits

Spin qubits are created via coherent control of single spins in their environment. We build and study chip-based electronic quantum circuits to experimentally implement few-qubit configurations in silicon and in germanium. Low hyperfine interaction in isotope-purified silicon and germanium and limited spin-orbit interaction are key advantages, resulting in attractive spin qubit coherence times. The isolation and the coherent control of single spins are realized in gate-defined Coulomb blockade quantum dot configurations in two-dimensional carrier systems. Our group has a longstanding expertise in gate-controlled rectangular quantum well Si/SiGe (electron spin qubits) and Ge/GeSi (hole spin qubits) semiconductor heterostructures and has pioneered the use of isotope-purified silicon (28Si) and germanium (70Ge) in MBE-grown Si/SiGe and Ge/GeSi heterostructures for spin qubit applications.

Currently, we are particularly interested in uncovering microscopic mechanisms which set the experimental limits of the qubit coherence and different qubit fidelities (initialization, manipulation, readout). Furthermore, we participate in transmitting the knowledge developed in academic labs to industrial pilot-lines, to leverage the synergies with the current silicon chip industry, in order to launch massive upscaling of our comparably small footprint qubit unit cells into chip-based quantum computing processors.

Proximity-induced superconductivity in semiconductors

A superconducting metal placed in the vicinity of a low-dimensional semiconductor carrier system may induce superconductivity into this semiconductor via the proximity effect. Being able to induce superconductivity into a semiconductor carrier systems allows us to explore several new physical phenomena, such as gate-tunable superconducting junctions, unconventional superconductivity in the presence of spin-orbit coupling and the creation of topologically protected eigenstates.

It is anticipated that the interface and the crystalline relationship between the superconductor and the low-dimensional carrier system are of particular importance for the efficiency of proximity-induced superconductivity. Our MBE cluster allows us to grow crystalline thin superconductor films directly – in situ – onto surface-near semiconductor quantum wells. This opens unique possibilities to control the interface and the crystalline relationship between superconductor and semiconductor. We study proximity-induced superconductivity in Ge- as well as in In(Ga)As-based quantum well hybrid heterostructures. One example which we explore is the creation of epitaxial hybrid superconductor/semiconductor heterostructures.

For 2D hole systems in germanium, we develop planar gate-tunable junctions and circuitry elements to realize noise-protected superconducting qubits. For 2D electron systems in the high spin-orbit material In(Ga)As, we explore signatures of unconventional superconductivity and emerging topological state properties.

Nanophotonics and engineered light-matter interaction

Semiconductor crystals can be excited optically or electrically to spontaneously induce light emission. By engineering the dielectric environment of the excited semiconductor, emitted light can not only be guided into optical modes or trapped in cavities, but also made to strongly interact with the semiconductor, creating phenomena such as stimulated emission.

We build nanocavities and optical mode guiding with custom-tailored dielectric properties, integrated with semiconductor emitters which for example allow us to explore the physics of low threshold lasing and to delve into experimental cavity quantum electrodynamics (cQED).

Regarding low threshold lasing, we are currently experimentally studying the physics governing lasing of single MBE-grown GaAs nanowires, considering aspects such as spatial quantum confinement of the active lasing volume, mode guiding as a function of the nanowire geometry as well as enhanced emission via coupling to engineered plasmonic substrates.

We have realized cQED devices by confining Landau-quantized as well as magneto-plasmonic states in densely packed 2D electron systems with switchable metamaterials. Spin qubits and Josephon junctions also represent quantum mechanical matter systems which can be coupled to superconducting microwave resonators to study cQED.

See also our publications and the thesis titles of our alumni for recent examples of our work:

PhD

Laura K. DiebelSi/SiGe spin qubit device building blocks for scalable architectures2025
Andreas SchmidbauerEvaluation of scalable gate architecture components for Si/SiGe spin qubits2024
Viola ZellerSingle GaAs nanowire spectroscopy: From 1D quantum confinement to optical waveguiding and lasing2023
Michael PragerSpin-orbit interaction and gate operation in custom-tailored InAlAs-based two-dimensional electron systems2022
Thomas MayerEpitaxial heterostructures of topological insulators: Band engineering and electronic transport2021
Maike HalbhuberSubcycle dynamics of deep-strong light-matter coupling2021
Floyd SchauerRealizing spin qubits in 28Si/SiGe: heterostructure gating, qubit decoherence and asymmetric charge sensing2020
Michaela TrottmannCharacterisation of III-V semiconductor hybrid systems for spinorbitronic functionality2020
Florian DirnbergerNew directions for semiconductor nanowires: Demonstrating robust spins and long-lived excitons2019
Juliane LaurerSpininjektion in Silizium2018
Andreas BayerUltrastrong THz light-matter interaction in custom-tailored semiconductur heterostructures2018
Christian NeumannIsotopically-enriched 28Si heterostructures for qubit devices2017
Josef LoherTwo-dimensional hole systems in indium-based quantum well heterostructures2016
Anna NirschlAuger-Rekombination und Droop in InGaN Quantentöpfen2016
Joachim HubmannGaAs nanowires: Epitaxy, crystal structure-related properties and magnetic heterostructures2015
Michael SchmalzbauerHeterostructure design of Si/SiGe two-dimensional electron systems for field-effect devices2015
Andreas WildDevelopment of a robust platform for spin qubits in SiGe heterostructures2013
Martin UtzEpitaxie von (Ga, Mn)As2012
Narayan SircarGroup IV all-semiconductor spintronics: Materials aspects and optical spin selection rules2012
Thomas ZabelStudy on silicon-germanium nanoislands as emitters for a monolithic silicon light source2012
Jürgen SailerMaterials and Devices for quantum information processing in Si/SiGe2010
Stefan AhlersMagnetic and electrical properties of epitaxial GeMn2008

Diploma/Master

Matthias HargasserQuantum transport in Ge/GeSi: Heterostructure characterization, two-gate-layer quantum dot fabrication and device evaluation2025
Leonie FeyTransverse multimode competition in single GaAs nanowire lasers2025
Fabian TanzerFabrication and electrical characterisation of three-gate-layer double dot quantum circuits in Si/SiGe2025
Verena StießFew-electron spin qubit device tuning in academic cleanroom and in industrially produced Si/SiGe quantum circuits2024
Lukas ZinklBiased cooling studies in undoped Si/SiGe field-effect devices for quantum circuits2024
Jakob WalshGate operation and magneto-transport characterization of undoped Ge/GeSi heterostructures2024
Michaela ZothFabrication and electrical characterisation of quantum circuits for spin qubits in 28Si/SiGe2023
Nadine MundiglNanophotonics in single wurtzite GaAs nanowires2022
Isabella KnottElaboration of a three-gate-layer design for spin qubits in 28Si/SiGe2022
Julian KloiberElectrostatic gating of topological insulator heterostructures: towards lateral topological p-n junctions2022
Lucia EbnetStudy on spin-orbit coupling in custom-tailored InGaAs/InAlAs heterostructures2022
Lukas HerrmannPhotoluminescence spectroscopy of GaAs nanowires in transverse electric fields2021
Rudolf RichterDevelopment and fabrication of a direct accumulation mode qubit device2021
Jaydean (Nancy) SchmidtControlling the gating behavior in high indium-content heterostructures for spin-orbitronic application2021
Florian SchmidElectronic transport study of band-structure engineered 3D tetradymite topological insulators2021
Hedwig WernerBand structure engineering of 3D topological insulator heterostructures2020
Martin SpecknerDesigning InAs-based quantum wells for epitaxial superconductor - semiconductor heterostructures2020
Carlo PeifferNonlinear charge sensors for Si/SiGe qubit devices2020
Wolfgang HimmlerFabrication and characterisation of Sb-based III/V-semiconductor 2D electron devices2019
Andreas SchmidbauerElectron spin qubits in 28Si: Implementation, single shot readout and spin relaxation times2019
Viola ZellerUltrastrong light-matter coupling in Landau-quantized electron systems2019
Elisabeth RichterNear-surface InGaAs/GaAs quantum dots: from luminescence properties to coupling to bowtie nanoantennas2018
Johannes BaumannBand structure engineering of the MBE grown topological insulator BSTS2018
Thomas KollerModulation der spontanen Emission in GaAs-Nanodrähten2018
Tobias WeinbergerMagnetotransport characterization of two-dimensional electron systems in undoped silicon quantum wells2018
Martin WieandConductance quantization in the high spin-orbit-coupling material InGaAs/InAlAs2018
Michael PragerRealisation of near-surface two-dimensional electron gases in InAs-based quantum wells2018
Benjamin PastötterOberflächennahe InAs-basierte Quantenpunkte2018
Daniela KrämerMagnetotransport study of GaAs-based two-dimensional electron systems for efficient field-effect control2018
Jan KönigDriving GaAs nanowires into the quantum regime2017
Simon SchambeckOptical switching of ultrastrong light-matter coupling2017
Helena DoblingerElektrische und optische Charakterisierung von Mikrosäulen-LEDs basierend auf dem Materialsystem (Al,Ga,In)N2017
Sven DorschSpininjection in Silicon2017
Sebastian SchwägerlGate-defined Quantum Dots in MBE-grown undoped Si/SiGe heterostructures2017
Moritz ForschInterface-induced spin-orbit coupling in GaAs core-shell nanowires2017
Marcel PozimskiUltrastrong light-matter coupling in Landau-quantized systems2016
Floyd SchauerGate-defined Quantum Dots in undoped Si/SiGe Heterostructures2016
Mareen SchäferTunnel structures for spin injection in Silicon2016
Christian FritschElektrostatische Kontrolle von undotierten Si/SiGe-Heterostrukturen2015
Florian DirnbergerSpin Dynamics in Wurtzite GaAs nanowires2015
Michaela TrottmannSpininjektion in Silizium2015
Armin HeinrichsdoblerTunnelstrukturen für Spininjektion in Germanium2015
Florian PicklHole-based Quantum Dots in Ge/SiGe Heterostructures2015
Tobias HeroOptische Spektroskopie an dreidimensionalen GaN/InGaN LED-Strukturen2014
Juliane ReifSpininjektion in Silizium2014
Sarah DeblerDouble quantum dots in a Si/SiGe heterostructure2013
Andreas BayerOptische Spektroskopie an freistehenden GaAs-Nanodrähten2013
Simon PfaehlerInvestigation of undoped Si/Ge heterostructures for double quantum dots2013
Christian NeumannFabrication and Characterization of Hole Quantum Dots in Ge/SiGe Heterostructures2013
Benjamin EsserOrts- und zeitaufgelöste Spektroskopie an Halbleiternanodrähten2013
Patrick AltmannSpectroscopic characterization of a hybrid structure coupling quantum dots to a two-dimensional electron gas2013
Anna NirschlModellierung des elektrischen Transports in blauen InGaN LEDs2012
Stefanie ObermeierPhotolumineszenzspektroskopie an niedrigdimensionalen Halbleiterstrukturen2012
Michael SchafbergerElectrostatic control of two-dimensional electron gases in Si/SiGe heterostructures2012
Ansgar DonnerGating of hybrid semiconductor nanostructures2012
Markus KarglPositionskontrolliertes Wachstum von GaAs-Nanodrähten und deren Charakterisierung mit Hilfe von Mikro-Photolumineszenz2012
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